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BUL45D2G - Bipolar NPN Power Transistor

Features

  • Low Base Drive Requirement.
  • High Peak DC Current Gain.
  • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread.
  • Integrated Collector.
  • Emitter Free Wheeling Diode.
  • Fully Characterized and Guaranteed Dynamic VCE(sat).
  • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – BUL45D2G

Datasheet Details

Part number BUL45D2G
Manufacturer ON Semiconductor
File Size 380.48 KB
Description Bipolar NPN Power Transistor
Datasheet download datasheet BUL45D2G Datasheet
Additional preview pages of the BUL45D2G datasheet.

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Full PDF Text Transcription

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BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it also suitable for PFC application.
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