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BUL44D2 - NPN Transistor

Features

  • Low Base Drive Requirement.
  • High Peak DC Current Gain (55 Typical) @ IC = 100 mA.
  • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread.
  • Integrated Collector.
  • Emitter Free Wheeling Diode.
  • Fully Characterized and Guaranteed Dynamic VCE(sat).
  • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads POWER.

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Datasheet preview – BUL44D2

Datasheet Details

Part number BUL44D2
Manufacturer Motorola Inc
File Size 504.38 KB
Description NPN Transistor
Datasheet download datasheet BUL44D2 Datasheet
Additional preview pages of the BUL44D2 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL44D2/D BUL44D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
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