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V29C31004T - 4 MEGABIT 524/288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY

General Description

PRELIMINARY

Key Features

  • s s s s s s 512Kx8-bit Organization Address Access Time: 90, 120 ns Single 3.3V ± 0.3 Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors.
  • Sector-Erase Cycle Time: 10ms (Max).
  • Byte-Write Cycle Time: 60µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation.
  • Active Read Current: 16mA (Typ).
  • Active Program Current: 30mA (Typ).
  • Standby Current: 50µA (Max) Hardware Data Protection Low VCC Program.

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Datasheet Details

Part number V29C31004T
Manufacturer Mosel Vitelic Corp
File Size 68.26 KB
Description 4 MEGABIT 524/288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY
Datasheet download datasheet V29C31004T Datasheet

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Full PDF Text Transcription (Reference)

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MOSEL VITELIC V29C31004T/V29C31004B 4 MEGABIT (524,288 x 8 BIT) 3.3 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 512Kx8-bit Organization Address Access Time: 90, 120 ns Single 3.3V ± 0.3 Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 60µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 16mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 50µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 2.