Datasheet4U Logo Datasheet4U.com

V29C51001T - 1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

General Description

PRELIMINARY

Key Features

  • s s s s s s 128Kx8-bit Organization Address Access Time: 45, 70, 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 256 Sectors.
  • Sector-Erase Cycle Time: 10ms (Max).
  • Byte-Program Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation.
  • Active Read Current: 20mA (Typ).
  • Active Program Current: 30mA (Typ).
  • Standby Current: 100µA (Max) Hardware Data Protection Low VCC Pro.

📥 Download Datasheet

Datasheet Details

Part number V29C51001T
Manufacturer Mosel Vitelic Corp
File Size 74.54 KB
Description 1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
Datasheet download datasheet V29C51001T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
V29C51001T (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY Mosel Vitelic
V29C51001B (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY Mosel Vitelic
V29C31001B (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY Mosel Vitelic
V29C31001T (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY Mosel Vitelic
V290BJ1-LE1 TFT LCD Module CHIMEI Innolux

Other Datasheets by Mosel Vitelic Corp

Part Number Description
V29C51001B 1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
V29C51000B 512K BIT 65/536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
V29C51000T 512K BIT 65/536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
V29C51002B 2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
V29C51002T 2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSEL VITELIC V29C51001T/V29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 128Kx8-bit Organization Address Access Time: 45, 70, 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 2.