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V29C51001B - (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY

Download the V29C51001B datasheet PDF. This datasheet also covers the V29C31001B variant, as both devices belong to the same (v29cx1001b / v29cx1001t) cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

PRELIMINARY

Key Features

  • s s s s s s 128Kx8-bit Organization Address Access Time: 45, 70, 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 256 Sectors.
  • Sector-Erase Cycle Time: 10ms (Max).
  • Byte-Program Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation.
  • Active Read Current: 20mA (Typ).
  • Active Program Current: 30mA (Typ).
  • Standby Current: 100µA (Max) Hardware Data Protection Low VCC Pro.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (V29C31001B_MoselVitelic.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number V29C51001B
Manufacturer Mosel Vitelic
File Size 102.56 KB
Description (V29Cx1001B / V29Cx1001T) CMOS FLASH MEMORY
Datasheet download datasheet V29C51001B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MOSEL VITELIC V29C51001T/V29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 128Kx8-bit Organization Address Access Time: 45, 70, 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 2.