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M54516P - 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

General Description

M54516P is five-circuit Darlington transistor arrays.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • q Medium breakdown voltage (BVCEO ≥ 25V) q High-current driving (Ic(max) = 500mA) q Driving available with PMOS IC output q Wide operating temperature range (Ta =.
  • 20 to +75°C) PIN.

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Full PDF Text Transcription for M54516P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M54516P. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuit...

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TION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

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