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RD09MUP2 - Silicon MOSFET Power Transistor

Description

RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

Features

  • High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz (4.5) 0.95+/-0.2 2.6+/-0.2.
  • High Efficiency: 50%min. (520MHz).
  • Integrated gate protection diode INDEX MARK [Gate] TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 (a) 0.2+/-0.05 8.0+/-0.2 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 6.2+/-0.2 5.6+/-0.2 4.2+/-0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. (3.6) (d) FEATURES •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz (4.5) 0.95+/-0.2 2.6+/-0.2 •High Efficiency: 50%min. (520MHz) •Integrated gate protection diode INDEX MARK [Gate] TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source APPLICATION SIDE VIEW Standoff = max 0.
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