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RD06HHF1 - Silicon RF Power MOS FET

Description

RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6

Features

  • 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN.

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Full PDF Text Transcription

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5 5deg PIN 1.Gate 2.Source 3.Drain UNIT:mm 9.5MAX ABSOLUTE MAXIMUM RATINGS www.DataSheet4U.
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