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RD20HMF1 - Silicon MOSFET Power Transistor

Description

RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.

High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.

Features

  • 1 6.6+/-0.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications. 7.2+/-0.5 OUTLINE DRAWING 22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1 High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 2.8+/-0.3 0.10 2 3 R1.6 14.0+/-0.4 FEATURES 1 6.6+/-0.3 APPLICATION For output stage of high power amplifiers in 900MHz band Mobile radio sets. 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. www.DataSheet.net/ RoHS compliance is indicate by the letter “G” after the Lot Marking.
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