CT20VS-8 - IGBT

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	CT20VS-8
Manufacturer	Mitsubishi Electric Semiconductor
File Size	25.89 KB
Description	IGBT
Datasheet	CT20VS-8 Datasheet
Additional preview pages of the CT20VS-8 datasheet.

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Full PDF Text Transcription

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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE DRAWING 1.5MAX. Dimensions in mm r 10.5MAX. 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES ............................................................................... 400V ¡ICM ................................................................................... 130A TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.

Published: Mar 24, 2005 |