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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20AS-8
STROBE FLASHER USE
CT20AS-8
OUTLINE DRAWING
6.5 5.0 ± 0.2
4
Dimensions in mm
5.5 ± 0.2
1.5 ± 0.2
0.5 ± 0.1
1.0MAX.
1.0
0.9MAX.
2.3MIN.
10MAX.
0.5 ± 0.2 2.3 2.3 0.8
2.3
1
2
3
wr q GATE w COLLECTOR e EMITTER r COLLECTOR e
q
¡VCES ................................................................................ 400V ¡ICM .................................................................................... 130A
MP-3
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.
CT20AS-8 Datasheet
