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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20TM-8
STROBE FLASHER USE
CT20TM-8
OUTLINE DRAWING
10.5MAX. 5.2
Dimensions in mm
2.8
5.0
1.2
φ 3.2 1.3MAX. 0.8
17
13.5MIN.
3.8MAX.
8.5
2.54
2.54
0.5
2.6
q w e w
q
q GATE w COLLECTOR e EMITTER
¡VCES ............................................................................... 400V ¡ICM ................................................................................... 130A
e
TO-220F
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.
CT20TM-8 Datasheet
