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ICE7N60 - N-Channel MOSFET

Description

TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Sourc

Features

  • r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Pin.

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Datasheet Details

Part number ICE7N60
Manufacturer Micross
File Size 710.79 KB
Description N-Channel MOSFET
Datasheet download datasheet ICE7N60 Datasheet

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Full PDF Text Transcription

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ICE7N60 N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 7A 600V 0.
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