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ICE7N60FP - N-Channel MOSFET

Features

  • Low rDS(on).
  • Ultra Low Gate Charge.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Increased transconductance performance.
  • Optimized design for high performance power systems.

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Datasheet Details

Part number ICE7N60FP
Manufacturer Icemos
File Size 300.29 KB
Description N-Channel MOSFET
Datasheet download datasheet ICE7N60FP Datasheet

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Full PDF Text Transcription

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ICE7N60FP ICE7N60FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC 7A ID=250uA 600V VGS=10V VDS=480V 0.57Ω 23nC D G S Max Min Typ Typ ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
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