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ICE73N199 - N-Channel MOSFET

Features

  • Low rDS(on).
  • Ultra Low Gate Charge.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Increased transconductance performance.
  • Optimized design for high performance power systems ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 10A 730V 0.23Ω 62nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER.

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Datasheet Details

Part number ICE73N199
Manufacturer Icemos
File Size 660.13 KB
Description N-Channel MOSFET
Datasheet download datasheet ICE73N199 Datasheet

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Full PDF Text Transcription

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Preliminary Data Sheet ICE73N199 ICE73N199 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 10A 730V 0.23Ω 62nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
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