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JAN2N5685 - (JAN2N5685 / JAN2N5686) NPN POWER SILICON TRANSISTOR

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www.DataSheet4U.com TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464 Devices 2N5685 2N5686 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N5685 2N5686 Units 60 60 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TC = +250C (1) @ TC = +1000C (1) Operating & Storage Junction Temperature Range 5.0 15 50 300 171 -55 to +200 Max. .0584 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC 0 TO-3* (TO-204AA) 1) Derate linearly 1.
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