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SLF7N70C - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 7.0A, 700V, RDS(on)typ = 1.5Ω@VGS = 10 V - Low gate charge ( typical 23 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP7N70C SLF7N70C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1).

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Datasheet Details

Part number SLF7N70C
Manufacturer Maple Semiconductor
File Size 1.21 MB
Description N-Channel MOSFET
Datasheet download datasheet SLF7N70C Datasheet

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SLP7N70C / SLF7N70C SLP7N70C / SLF7N70C 700V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 7.0A, 700V, RDS(on)typ = 1.
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