Datasheet Details
| Part number | SLF32N20C |
|---|---|
| Manufacturer | Maple Semiconductor |
| File Size | 464.92 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet |
 SLF32N20C Datasheet
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Description
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- - 32A, 200V, RDS(on) typ. = 0.080Ω@VGS = 10 V - Low gate charge ( typical 50 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP32N20C SLF32N20C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.