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MDV1545S - N-Channel MOSFET

General Description

The MDV1545S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV1545S is suitable device for DC/DC Converter and general purpose applications.

Key Features

  •  VDS = 30V  ID = 32 A @VGS = 10V  RDS(ON) < 10.7 mΩ @VGS = 10V < 13.0 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested DD DD DD DD D S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=70oC (Silicon Limited) TA=25oC TA=70oC TC=.

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Datasheet Details

Part number MDV1545S
Manufacturer MagnaChip
File Size 1.00 MB
Description N-Channel MOSFET
Datasheet download datasheet MDV1545S Datasheet

Full PDF Text Transcription for MDV1545S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MDV1545S. For precise diagrams, and layout, please refer to the original PDF.

MDV1545S – Single N-Channel Trench MOSFET 30V MDV1545S Single N-channel Trench MOSFET 30V General Description The MDV1545S uses advanced MagnaChip’s MOSFET Technology, wh...

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scription The MDV1545S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545S is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 30V  ID = 32 A @VGS = 10V  RDS(ON) < 10.7 mΩ @VGS = 10V < 13.0 mΩ @VGS = 4.