Datasheet4U Logo Datasheet4U.com

MDV1526 - N-Channel Trench MOSFET

General Description

The MDV1526 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV1526 is suitable for DC/DC converter and general purpose applications.

Key Features

  • VDS = 30V ID = 20A @VGS = 10V RDS(ON) < 11.0mΩ @VGS = 10V < 16.4mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC T.

📥 Download Datasheet

Datasheet Details

Part number MDV1526
Manufacturer MagnaChip
File Size 853.47 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDV1526 Datasheet

Full PDF Text Transcription for MDV1526 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MDV1526. For precise diagrams, and layout, please refer to the original PDF.

MDV1526 – Single N-Channel Trench MOSFET 30V MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11mΩ General Description The MDV1526 uses advanced MagnaChip’s MOSFET Techno...

View more extracted text
eneral Description The MDV1526 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1526 is suitable for DC/DC converter and general purpose applications. Features VDS = 30V ID = 20A @VGS = 10V RDS(ON) < 11.0mΩ @VGS = 10V < 16.4mΩ @VGS = 4.