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MDV1523 - N-Channel Trench MOSFET

General Description

The MDV1523 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV1523 is suitable for DC/DC converter and general purpose applications.

Key Features

  • VDS = 30V ID = 24A @VGS = 10V RDS(ON) < 6.1mΩ @VGS = 10V < 8.4mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC The.

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Datasheet Details

Part number MDV1523
Manufacturer MagnaChip
File Size 851.54 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDV1523 Datasheet

Full PDF Text Transcription for MDV1523 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MDV1523. For precise diagrams, and layout, please refer to the original PDF.

MDV1523 – Single N-Channel Trench MOSFET 30V MDV1523 Single N-channel Trench MOSFET 30V, 24A, 6.1mΩ General Description The MDV1523 uses advanced MagnaChip’s MOSFET Techn...

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General Description The MDV1523 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1523 is suitable for DC/DC converter and general purpose applications. Features VDS = 30V ID = 24A @VGS = 10V RDS(ON) < 6.1mΩ @VGS = 10V < 8.4mΩ @VGS = 4.