Datasheet Details
| Part number | MDD1901 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 826.72 KB |
| Description | Single N-channel Trench MOSFET |
| Datasheet |
 MDD1901 Datasheet
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General Description
The MDD1901 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDD1901 is suitable device for DC/DC Converters and general purpose applications.
Key Features
- VDS = 100V ID = 40A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) G S TC=25oC TC=100oC TC=25oC TC=100oC Symbol VDSS.