MDD1501
Description
The MDD1501 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1501 is suitable device for DC to DC converter and general purpose applications.
Features
VDS = 30V
ID = 67.4A @VGS = 10V
RDS(ON) (MAX)
< 5.6mΩ @VGS = 10V
< 8.6mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
Absolute Maximum Ratings (Ta = 25o C)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25o C TC=70o C TA=25o C TA=70o C
TC=25o C TC=70o C TA=25o C TA=70o C
Symbol VDSS VGSS
EAS TJ, Tstg
Rating 30 ±20 67.4 53.9
25.1(3) 20.2(3)
270 44.6 28.5 6.2(3) 4.0(3) 94 -55~150
Unit V V
W m J o C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Symbol...
