MDD14N25C
Description
These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 250V ID = 10.2A RDS(ON) ≤ 0.28Ω
@ VGS = 10V
Applications
Power Supply Motor Control High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25o C)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Repetitive Avalanche Energy(1) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
TC=25o C TC=100o C
TC=25o C Derivate above 25 o C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Dec. 2022 Version 1.2
Symbol VDSS VGSS
PD dv/dt...
