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MT8361N3 - Dual N- & P-Channel Power MOSFET

Key Features

  • ‡ N-Channel N 30V/8A R DS(on) = 0.024Ω @ VGS = 10V R DS(on) = 0.035Ω @ VGS = 4.5V ‡ P-Channel -30V/-5A R DS(on) = 0.050Ω @ VGS = -10V R DS(on) = 0.075Ω @ VGS = -4.5V Absolute Maximum Ratings(TA = 25 unless otherwise noted)  P Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storag.

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Datasheet Details

Part number MT8361N3
Manufacturer MT Semiconductor
File Size 1.29 MB
Description Dual N- & P-Channel Power MOSFET
Datasheet download datasheet MT8361N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT8361N3 Dual N & P-Channel PowerTrench® MOSFET *HQHUDO'HVFULSWLRQ These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features ‡ N-Channel N 30V/8A R DS(on) = 0.024Ω @ VGS = 10V R DS(on) = 0.035Ω @ VGS = 4.5V ‡ P-Channel -30V/-5A R DS(on) = 0.050Ω @ VGS = -10V R DS(on) = 0.075Ω @ VGS = -4.