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MT8306N3 - N-Channel MOSFET

Key Features

  • ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $.

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Datasheet Details

Part number MT8306N3
Manufacturer MT Semiconductor
File Size 629.42 KB
Description N-Channel MOSFET
Datasheet download datasheet MT8306N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MT8306N3 1&KDQQHO(QKDQFHPHQW0RGH)LHOG (IIHFW7UDQVLVWRU Product Summary ‡ VDS = 30V ‡ I D = 20A R ‡ DS(ON) 6 m @VGS=10V R ‡ DS(ON) 8 m @VGS=4.5V  Features ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $SSOLFDWLRQV ‡ Notebook Computer ‡ Portable Battery Pack DFN3X3-8L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C IDSM Pulsed Drain Current B IDM Avalanche Current C IAR Repetitive avalanche energy L=0.