MT8332N3 - N-Channel Enhancement Mode Field Effect Transistor

MT Semiconductor

Key Features

6XSSHUKLJKGHQVHFHOOGHVLJQIRUORZ R'621 5XJJHGDQG.

MT8332N3 n-channel enhancement mode field effect transistor by MT Semiconductor - Datasheet Preview

Datasheet Details

Part number	MT8332N3
Manufacturer	MT Semiconductor
File Size	964.24 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	MT8332N3 Datasheet

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MT8332N3 -Channel Enhanc ement Mode Field Effect Transistor 3URGXFW6XPPDU PRODUCT SUMMARY VDSS ID RDS(ON) 30V 25A 10 m¡@ VGS=10V 15 m¡@ VGS=4.5V Features 6XSSHUKLJKGHQVHFHOOGHVLJQIRUORZ R'621 5XJJHGDQGUHOLDEOH Simple drive requirement DFN3*3 Package Absolute Maximum Ratings(TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć Pulsed Drain Current B Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 30 ±20 25 45 1.