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LSIC2SD065E20CCA - 650V 20A SiC Schottky Barrier Diode

General Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.

This diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Key Features

  • AEC-Q101 qualified.
  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C. maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes.

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LSIC2SD065A08A GEN2 SiC Schottky Diode
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GEN2 SiC Schottky Diode LSIC2SD065E20CCA, 650 V, 20 A, TO-247-3L LSIC2SD065E20CCA 650 V, 20 A SiC Schottky Barrier Diode RoHS Pb Circuit Diagram TO-247-3L PIN 1 PIN 2 PIN 3 CASE 1 23 Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current (Per Leg/Component) Non-Repetitive Forward Surge Current (Per Leg) Power Dissipation (Per Leg/Component) Operating Junction Temperature Storage Temperature Soldering Temperature Symbol VRRM VR IF IFSM PTot TJ TSTG Tsold Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.