LSIC2SD065A16A
Description
This series of silicon carbide (Si C) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features
- AEC-Q101 qualified
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses pared to Si bipolar diodes
Circuit Diagram TO-220-2L
Case Case
Maximum Ratings
Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage
Continuous Forward Current
Non-Repetitive Forward Surge Current Power Dissipation Operating Junction Temperature Storage Temperature Soldering Temperature
Symbol VRRM VR
IFSM PTot TJ TSTG TSOLD
Applications
- Boost diodes in...
