LSI1012N3T5G
FEATURES
D Trench FETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation
APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
Marking
Shipping
LSI1012N3T5G S-LSI1012N3T5G
A2
10000/Tape&Reel
LESHAN RADIO PANY, LTD.
LSI1012N3T5G S-LSI1012N3T5G
3 21
SOT883
3 Drain
Gate 1
Source 2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage Gate-Source Voltage
Continu...
