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LMP3415ZF - 20V P-Channel Enhancement MOSFET

General Description

LMP3415ZF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Portable Equipment Battery Powered System Net Working System Pin Configuration LMP3415ZF (SOT-23) Top Views Pin Description 1 Gate 2 So

Key Features

  • RDS(ON) =45mΩ@VGS = -4.5V.
  • RDS(ON) =58mΩ@VGS = -2.5V.
  • RDS(ON) =85mΩ@VGS = -1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount.

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Datasheet Details

Part number LMP3415ZF
Manufacturer LFC semi
File Size 739.26 KB
Description 20V P-Channel Enhancement MOSFET
Datasheet download datasheet LMP3415ZF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMP3415ZF Rev. 1.0 LMP3415ZF 20V P-Channel Enhancement MOSFET Features ● RDS(ON) =45mΩ@VGS = -4.5V ● RDS(ON) =58mΩ@VGS = -2.5V ● RDS(ON) =85mΩ@VGS = -1.8V ● Super high density cell design for extremely low RDS (ON) ● Exceptional on-resistance and maximum DC current capability ● SOT-23 package design These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Product Description LMP3415ZF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.