LMNBSS139TFF
Features
- 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- ESD Protected: 1500V
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Applications
- Notebook
- Load Switch
- LED applications
Pin Configuration LMNBSS139TFF (DFN1006-3L)
Transparent Top View
Pin
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMNBSS139TFF
P/N LMNBSS139
PKG Code Pb Free Code
Rev. 1.0
Package DFN1006-3L
Quantity...
