LMNBSS139K
Features
- 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- ESD Protected: 1500V
- SOT-523 Package Design
These devices are well suited for high efficiency fast switching applications.
Product Description
The N-Channel enhancement mode power field effect transistors is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Applications
- Notebook
- Load Switch
- LED applications
Pin Configuration LMNBSS139KX7F (SOT-523)
Top Views
Pin
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMNBSS139KX7F LMNBSS139K
PKG Code X7
Pb Free Code F
Package SOT-523
Rev. 1.0
Quantity Reel 3000...
