LMNBSS139JZF
Features
- RDS(ON)=2.5Ω@VGS=4.5V
- RDS(ON)=4Ω@VGS=2.5V
- Improved dv/dt capability
- Fast switching
- ESD Protected: 1500V
These devices are well suited for high efficiency fast switching applications.
Product Description
The N-Channel enhancement mode power field effect transistors is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Applications
- Notebook
- Load Switch
- LED applications
Pin Configuration LMNBSS139JZF (SOT-23)
Top Views
Pin
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMNBSS139JZF LMNBSS139
PKG Code JZ
Pb Free Code F
Rev. 1.0
Package SOT-23
Quantity Reel 3000 pcs
Marking Information Part Marking J2...
