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LMNBSS139JZF - 60V N-Channel Enhancement Mode MOSFET

General Description

The N-Channel enhancement mode power field effect transistors is using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • RDS(ON)=2.5Ω@VGS=4.5V.
  • RDS(ON)=4Ω@VGS=2.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • ESD Protected: 1500V These devices are well suited for high efficiency fast switching.

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Datasheet Details

Part number LMNBSS139JZF
Manufacturer LFC semi
File Size 533.69 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMNBSS139JZF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMNBSS139JZF Rev. 1.0 LMNBSS139JZF 60V N-Channel Enhancement Mode MOSFET Features ● RDS(ON)=2.5Ω@VGS=4.5V ● RDS(ON)=4Ω@VGS=2.5V ● Improved dv/dt capability ● Fast switching ● ESD Protected: 1500V These devices are well suited for high efficiency fast switching applications. Product Description The N-Channel enhancement mode power field effect transistors is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.