Datasheet Details
| Part number | LMN3660EJZF |
|---|---|
| Manufacturer | LFC semi |
| File Size | 659.31 KB |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 LMN3660EJZF Datasheet
|
|
|
General Description
LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
- Low Gate Charge.
- ESD Protected.
- SOT-23 package design Product.