LMN3612PJZF - 30V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V.
Improved dv/dt capability.
Fast switching.
Suit for 2.5V Gate Drive.

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LMN3612PJZF 30v n-channel mosfet by LFC semi - Datasheet Preview

Datasheet Details

Part number	LMN3612PJZF
Manufacturer	LFC semi
File Size	730.35 KB
Description	30V N-Channel MOSFET
Datasheet	LMN3612PJZF Datasheet

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Full PDF Text Transcription (Reference)

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LMN3612PJZF Rev. 1.0 LMN3612PJZF 30V N-Channel MOSFET Features  30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V  Improved dv/dt capability  Fast switching  Suit for 2.5V Gate Drive Applications  Green Device Available  SOT-23 package design Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.