LMN3612PJZF
Features
- 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- Suit for 2.5V Gate Drive Applications
- Green Device Available
- SOT-23 package design
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Applications
- Notebook
- Load Switch
- LED applications
Pin Configuration
LMN3612PJZF (SOT-23)
Transparent top view
Pin
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMN3612PJZF LMN3612P
Rev. 1.0
Ordering Information
PKG code
Pb Free...
