Datasheet Details
| Part number | LMN3660EAF |
|---|---|
| Manufacturer | LFC semi |
| File Size | 601.92 KB |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 LMN3660EAF Datasheet
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General Description
LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
- Low Gate Charge.
- ESD Protected.
- SOT-723 package design Product.