LMN3660EAF
Features
- Low Gate Charge
- ESD Protected
- SOT-723 package design
Product Description
LMN3660E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Power Management in Note book
- Portable Equipment
- Load Switch
These devices are particularly suited for low
Pin Configuration
LMN3660EAF (SOT-723)
Pin
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Ordering Information
Part Number LMN3660EAF
P/N LMN3660E
Rev. 1.0
Ordering Information
PKG code
Pb Free code
Package SOT-723
Quantity 8000 PCS
Marking Information
Part Marking 0XW
Marking Information Part Number 0
LFC code XW
Absolute Maximum Ratings
(TC=25ºC Unless otherwise...
