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ZXTP2013Z - PNP Transistor

Key Features

  • s.
  • 3.5 amps continuous current.
  • Up to 10 amps peak current.
  • Very low saturation voltages PNP Transistor ZXTP2013Z Transistors 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter.
  • Absolute Maximum Ratings TA = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -7 Continuous Collector Current Peak Pulse Current IC -3.5 A ICM -10 Power Dissipation at TA = 25℃ (a).

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Other Datasheets by Kexin Semiconductor

Part Number Description
ZXTP2014Z PNP Transistor

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SMD Type ■ Features ● 3.5 amps continuous current ● Up to 10 amps peak current ● Very low saturation voltages PNP Transistor ZXTP2013Z Transistors 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings TA = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -7 Continuous Collector Current Peak Pulse Current IC -3.5 A ICM -10 Power Dissipation at TA = 25℃ (a) Power Dissipation at TA = 25℃ (b) 1.5 Pd W 2.1 Thermal Resistance Junction to Ambient (a) Thermal Resistance Junction to Ambient (b) 83 RθJA ℃/W 60 Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Notes: (a) For a device surface mounted on 25mm x 25mm x 1.