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ZXTP2013Z - 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

Key Features

  • BVCEO > -100V.
  • IC = -3.5A High Continuous Current.
  • RSAT = 57mΩ for a Low Equivalent On-Resistance.
  • Low Saturation Voltage VCE(SAT) < -85mV @ IC = -1A.
  • hFE Specified Up to -10A for High Current Gain Hold Up.
  • Complementary NPN Type: ZXTN2011Z.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > -100V  IC = -3.5A High Continuous Current  RSAT = 57mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage VCE(SAT) < -85mV @ IC = -1A  hFE Specified Up to -10A for High Current Gain Hold Up  Complementary NPN Type: ZXTN2011Z  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: SOT89  Case Material: Molded Plastic.