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ZXTP2014Z - PNP Transistor

Key Features

  • s.
  • 3 amps continuous current.
  • Up to 10 amps peak current.
  • Very low saturation voltages.
  • Marking: 2014 1.70 0.1 0.42 0.1 0.46 0.1 Transistors 1.Base 2.Collector 3.Emitter.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Peak Pulse Current Power Dissipation at TA=25°C (a) Power Dissipation at TA=25°C (b) Thermal Resistance Junction to Ambient Junction Temperature St.

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Other Datasheets by Kexin Semiconductor

Part Number Description
ZXTP2013Z PNP Transistor

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SMD Type PNP Transistors ZXTP2014Z (KXTP2014Z) ■ Features ● 3 amps continuous current ● Up to 10 amps peak current ● Very low saturation voltages ● Marking: 2014 1.70 0.1 0.42 0.1 0.46 0.1 Transistors 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Peak Pulse Current Power Dissipation at TA=25°C (a) Power Dissipation at TA=25°C (b) Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC ICM PD RθJA TJ Tstg Rating -180 -140 -7 -3 -10 1.5 2.1 83 60 150 -55 to 150 Unit V A w ℃/W ℃ NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.