P-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
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SMD Type
N-Channel MOSFET STS6NF20V
TraMnOsiSsFtoErsT
Ƶ Features
ƽ VDS (V) = 20V ƽ ID = 6 A ƽ RDS(ON) ˘ 40m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 45m¡ (VGS = 2.7V) ƽ Ultra Low Threshold Gate Drive ƽ Standard Outline For Easy Automated
Surface Mount Assembly
SOP-8
1.50 0.15
+0.04 0.21 -0.02
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain
INTERNAL SCHEMATIC DIAGRAM
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 20kȍ) Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Total Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range
TC=25ć TC=100ć
1) Pulse width limited by safe operation area.
Symbol VDS VDGR VGS
ID
IDM 1) Ptot RthJA TJ Tstg
Rating 20 20 ±12 6 3.8 24 2.