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NDT8N20 - N-Channel MOSFET

Key Features

  • s.
  • VDS =200V,ID =8A.
  • RDS(ON).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel MOSFET NDT8N20 TraMnOsiSsFtoErsT ■ Features ● VDS =200V,ID =8A ● RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses D + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.08 -0.07 0.80+0.1 -0.1 0.127 m ax +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 + 0.15 5 .5 5 -0.15 3.