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NDT7N70 - N-Channel MOSFET

Key Features

  • ƽ VDS (V) = 700V ƽ ID = 7A ƽ RDS(ON) < 1.2ಳ @ VGS = 10V,ID = 3.5A ƽ Fast switching capability ƽ Avalanche energy specified ƽ Improved dv/dt capability, high ruggedness + 0.2 9 .7 0 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 0 .15 1 .5 0 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.80+0.1 -0.1 0.127 m ax + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 +0 5.55 .15 -0.15 3.80 Unit: mm 1 Gate 2 Drain 3 Source 4 Drain Ƶ Absolute Maximum Ratings (TC.

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SMD Type N-Channel MOSFET NDT7N70 TraMnOsiSsFtoErsT Ƶ Features ƽ VDS (V) = 700V ƽ ID = 7A ƽ RDS(ON) < 1.2ಳ @ VGS = 10V,ID = 3.5A ƽ Fast switching capability ƽ Avalanche energy specified ƽ Improved dv/dt capability, high ruggedness + 0.2 9 .7 0 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 0 .15 1 .5 0 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.80+0.1 -0.1 0.127 m ax + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 +0 5.55 .15 -0.15 3.