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NDT70N03 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 33A (VGS = 10V).
  • RDS(ON) ＜ 4.3mΩ (VGS = 10V) D.
  • RDS(ON) ＜ 6.5mΩ (VGS = 4.5V) G S + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 0.15 1 .5 0 -0.15 3.80 + 0.15 5 .5 5 -0.15 +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Volta.

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SMD Type N-Channel MOSFET NDT70N03 MOSFET ■ Features ● VDS (V) = 30V ● ID = 33A (VGS = 10V) ● RDS(ON) ＜ 4.3mΩ (VGS = 10V) D ● RDS(ON) ＜ 6.5mΩ (VGS = 4.5V) G S + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 0.15 1 .5 0 -0.15 3.80 + 0.15 5 .5 5 -0.15 +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.