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KX4N60F - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 2.4 A (VGS = 10V).
  • RDS(ON) ＜ 2.5Ω (VGS = 10V) MOSFET N-Channel MOSFET KX4N60F TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 15.87 ±0.20 3.30 ±0.20 12.42 ±0.20 D G S 1.47max 9.75 ±0.20 1 23 2.54typ 2.54typ 0.80 ±0.20 0.50 ±0.20 2.76 ±0.20.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=100℃ Pulsed Drain Current.

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DIP Type ■ Features ● VDS (V) = 600V ● ID = 2.4 A (VGS = 10V) ● RDS(ON) ＜ 2.5Ω (VGS = 10V) MOSFET N-Channel MOSFET KX4N60F TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 15.87 ±0.20 3.30 ±0.20 12.42 ±0.20 D G S 1.47max 9.75 ±0.20 1 23 2.54typ 2.54typ 0.80 ±0.20 0.50 ±0.20 2.76 ±0.20 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=100℃ Pulsed Drain Current Repetitive and Non-Repetitive Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy Repetitive Avalanche Energy Thermal Resistance.Junction- to-Ambient Thermal Resistance.