Features
ƽ VDS S = 600V ƽ ID = 4.0 A ƽ Rdson < 2.5വ(Vgs=10V) ƽ Low gate charge ƽ Low Crss (typical 14pF ) ƽ Fast switching ƽ 100% avalanche tested ƽ Improved dv/dt capability ƽ RoHS product
MOSFET
N-Channel MOSFET KX4N60
TO-220
9.90 ± 0.20 (8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10.
0.05
2.80 ± 0.10
(1.70) 1.30 ± 0.10
(3.00) (3.70) 15.90 ± 0.20 18.95MAX. 9.20 ± 0.20 (1.46)
(45 )
10.08 ± 0.30
13.08 ± 0.20 (1.00)
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP [2.54 ± 0.20 ]
0.80 ± 0.10
2.54.
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DIP Type
Ƶ Features
ƽ VDS S = 600V ƽ ID = 4.0 A ƽ Rdson < 2.5വ(Vgs=10V) ƽ Low gate charge ƽ Low Crss (typical 14pF ) ƽ Fast switching ƽ 100% avalanche tested ƽ Improved dv/dt capability ƽ RoHS product
MOSFET
N-Channel MOSFET KX4N60
TO-220
9.90 ± 0.20 (8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10 –0.05
2.80 ± 0.10
(1.70) 1.30 ± 0.10
(3.00) (3.70) 15.90 ± 0.20 18.95MAX.
9.20 ± 0.20 (1.46)
(45 )
10.08 ± 0.30
13.08 ± 0.20 (1.00)
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP [2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP [2.54 ± 0.20 ]
10.00 ± 0.20
0.50
+0.10 –0.05
2.40 ± 0.
Published:
Dec 17, 2025
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KX4N60 Datasheet
