The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
N-Channel MOSFET KX4N15DY
■ Features
● VDS =150V,ID =5.2A ● RDS(ON) <44mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
SOP-8
+0.04 0.21 -0.02
D
TraMnOsiSsFtoErsT
1.50 0.15
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain
G S
■ Absolute Maximum Ratings (TA = 25℃, unless otherwise specified)
Drain-Source Voltage Gate-Source Voltage
Parameter
Symbol VDS VGS
Continuous Drain Current
Pulsed Drain Current (Note 1) Power Dissipation Thermal Resistance.Junction- to-Case (Note 2) Junction Temperature Storage Temperature Range
TC = 25℃ TC = 100℃
ID
IDM PD RthJC TJ Tstg
Rating 150 ±20 5.2 3.7 42 3.5 35.
KX4N15DY Datasheet
