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KRF7476PBF - Power MOSFET

Key Features

  • s.
  • VDS=15 V.
  • RDS(on)=0.008Ω@VGS=4.5V.
  • RDS(on)= 0.03Ω @VGS= 2.8 V S 1 S 2 S 3 G 4 AA 8 D 7 D 6 D 5 D Top View.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Rating 15 ±12 15 120 2.5 50 -55 to 150 Unit V V A A W °C/W ℃ www. kexin. co.

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SMD Type HEXFET Power MOSFET KRF7476PBF MOSFET ■ Features ● VDS=15 V ● RDS(on)=0.008Ω@VGS=4.5V ● RDS(on)= 0.03Ω @VGS= 2.8 V S 1 S 2 S 3 G 4 AA 8 D 7 D 6 D 5 D Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Rating 15 ±12 15 120 2.5 50 -55 to 150 Unit V V A A W °C/W ℃ www.kexin.com.cn 1 SMD Type ICIC SMD Type ICIC KRF7476PBF ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage BVDSS VGS = 0 V, ID = –250 μA VDS = 9.