The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
HEXFET Power MOSFET KRF7401
Features
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25
ID
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
Continuous Drain Current, VGS @ 4.5V,TC = 70
ID
Pulsed Drain Current*1
IDM
Power Dissipation
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt*2
dv/dt
Operating Junction and Storage Temperature Range TJ,TSTG
Maximum Junction-to-Ambient
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD 4.1A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150
Rating 10 8.7 7 35 2.5 0.