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KRF7401 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25 ID Continuous Drain Current, VGS @ 4.5V,Ta = 25 ID Continuous Drain Current, VGS @ 4.5V,TC = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt.
  • 2 dv/d.

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SMD Type HEXFET Power MOSFET KRF7401 Features Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25 ID Continuous Drain Current, VGS @ 4.5V,Ta = 25 ID Continuous Drain Current, VGS @ 4.5V,TC = 70 ID Pulsed Drain Current*1 IDM Power Dissipation PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt*2 dv/dt Operating Junction and Storage Temperature Range TJ,TSTG Maximum Junction-to-Ambient R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 4.1A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150 Rating 10 8.7 7 35 2.5 0.