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KRF7104 - Power MOSFET

Key Features

  • Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current, VGS @ 10V @ Ta = 25 ID Continuous Drain Current, VGS @ 10V @ Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @TC= 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Pea.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type ICIC HEXFET Power MOSFET KRF7104 Features Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current, VGS @ 10V @ Ta = 25 ID Continuous Drain Current, VGS @ 10V @ Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @TC= 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt *3 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient *2 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t 10sec. *3 ISD -2.